Manufacturer Part Number
NVD5865NLT4G
Manufacturer
onsemi
Introduction
The NVD5865NLT4G is a high-performance N-Channel MOSFET transistor from onsemi. It is designed for use in automotive and industrial applications requiring high efficiency and reliability.
Product Features and Performance
60V Drain-to-Source Voltage
16mΩ Max On-Resistance at 19A, 10V
10A Continuous Drain Current at 25°C Ambient
46A Continuous Drain Current at 25°C Case
1400pF Max Input Capacitance at 25V
1W Power Dissipation at 25°C Ambient
71W Power Dissipation at 25°C Case
-55°C to 175°C Operating Temperature Range
Product Advantages
High efficiency due to low on-resistance
High current handling capability
Automotive and industrial grade reliability
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage: 60V
Gate-to-Source Voltage: ±20V
On-Resistance: 16mΩ Max
Drain Current: 10A Continuous at 25°C Ambient, 46A Continuous at 25°C Case
Input Capacitance: 1400pF Max at 25V
Power Dissipation: 3.1W at 25°C Ambient, 71W at 25°C Case
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Automotive applications (e.g., motor drives, power supplies, switching circuits)
Industrial applications (e.g., power supplies, motor drives, inverters)
Product Lifecycle
This product is an active and in-production part from onsemi.
Replacement or upgrade options may be available, but specific details should be confirmed with the manufacturer.
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved system performance
High current handling capability for demanding applications
Automotive and industrial grade reliability for mission-critical uses
Wide operating temperature range for versatile deployment
AEC-Q101 qualification and RoHS3 compliance for quality and safety
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