NVATS5A112PLZT4G - onsemi

Manufacturer Part Number

NVATS5A112PLZT4G

Manufacturer

onsemi

Introduction

This product is a P-channel MOSFET transistor designed for automotive and industrial applications.

Product Features and Performance

Automotive-grade AEC-Q101 qualified

Wide operating temperature range of -55°C to 175°C

High drain-to-source voltage of 60V

Low on-resistance of 43mΩ @ 13A, 10V

High continuous drain current of 27A at 25°C

Low input capacitance of 1450pF @ 20V

Maximum power dissipation of 48W at Tc

Product Advantages

Robust design for harsh automotive environments

Efficient power switching and control

Compact DPAK/ATPAK surface-mount package

Wide temperature range enables use in diverse applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 43mΩ @ 13A, 10V

Continuous Drain Current (Id): 27A @ 25°C

Input Capacitance (Ciss): 1450pF @ 20V

Power Dissipation (Pd): 48W @ Tc

Quality and Safety Features

RoHS3 compliant

AEC-Q101 automotive qualification

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and systems that require high-performance power switching and control.

Application Areas

Automotive electronics

Industrial motor control

Power conversion and management

General-purpose power switching

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available in the future as technology and requirements evolve.

Key Reasons to Choose This Product

Robust automotive-grade design for reliable performance in harsh environments

Efficient power switching and control capabilities with low on-resistance and high current handling

Wide operating temperature range allowing use in diverse applications

Compact surface-mount DPAK/ATPAK package for space-constrained designs

RoHS3 compliance and AEC-Q101 qualification for quality and safety assurance