Manufacturer Part Number
SI2302ADS-T1
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
20 V drain-to-source voltage
60 mOhm maximum on-resistance at 3.6 A, 4.5 V
1 A continuous drain current at 25°C
300 pF maximum input capacitance at 10 V
700 mW maximum power dissipation at 25°C
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact SOT-23-3 package for space-constrained designs
Key Technical Parameters
Vdss: 20 V
Vgs (Max): ±8 V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6 A, 4.5 V
Id (Continuous) @ 25°C: 2.1 A
Ciss (Max) @ Vds: 300 pF @ 10 V
Power Dissipation (Max): 700 mW
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Surface mount SOT-23-3 (TO-236) package
Application Areas
Power management circuits
Switching applications
Electronic devices and systems
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power switching with low on-resistance
High current handling capability
Compact package for space-constrained designs
RoHS3 compliance for environmental safety
Availability in tape and reel packaging for automated assembly