SI2302ADS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2302ADS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Low on-resistance (Rds(on)) of 60 mΩ @ 3.6A, 4.5V

Continuous drain current (ID) of 2.1A at 25°C

Operating temperature range of -55°C to 150°C

Input capacitance (Ciss) of 300 pF @ 10V

Power dissipation (Pd) of 700 mW at 25°C

Product Advantages

Excellent switching performance

High power efficiency

Wide temperature range operation

Compact SOT-23-3 package

Key Technical Parameters

Drain-to-Source Voltage (VDS): 20V

Gate-to-Source Voltage (VGS): ±8V

Threshold Voltage (VGS(th)): 1.2V @ 50A

Drive Voltage (Vgs): 2.5V (max Rds(on)), 4.5V (min Rds(on))

Gate Charge (Qg): 10 nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Power management circuits

Switching regulators

Motor control

Battery-powered devices

Industrial automation

Product Lifecycle

Currently in production

Replacements and upgrades available

Key Reasons to Choose

Excellent performance-to-cost ratio

Compact and space-saving design

Reliable and durable operation

Wide temperature range suitability

Ease of integration into various electronic systems