Manufacturer Part Number
SI2302DDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI2302DDS-T1-GE3 is a discrete N-channel MOSFET transistor from Vishay / Siliconix.
Product Features and Performance
TrenchFET technology
Continuous Drain Current (Id) of 2.9A at 25°C
Drain to Source Voltage (Vdss) of 20V
On-Resistance (Rds(on)) of 57mΩ at 3.6A, 4.5V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High current capability
Low on-resistance
Compact SOT-23-3 (TO-236) package
Suitable for a variety of power management and switching applications
Key Technical Parameters
Package: SOT-23-3 (TO-236)
Gate-Source Voltage (Vgs) Max: ±8V
Gate Charge (Qg) Max: 5.5nC at 4.5V
Threshold Voltage (Vgs(th)) Max: 850mV at 250μA
Quality and Safety Features
RoHS3 compliant
Industrial-grade quality and reliability
Compatibility
Suitable for a variety of power management and switching applications
Application Areas
Power management circuits
Switching regulators
Motor drivers
Battery charging circuits
General-purpose switching applications
Product Lifecycle
The SI2302DDS-T1-GE3 is an active product with no plans for discontinuation.
Replacement or upgrade options are available if needed.
Several Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power management.
Compact SOT-23-3 (TO-236) package for space-constrained designs.
Wide operating temperature range for use in diverse environmental conditions.
RoHS3 compliance for environmentally-friendly applications.
Industrial-grade quality and reliability for long-term, dependable performance.