Manufacturer Part Number
NTR2101PT1G
Manufacturer
onsemi
Introduction
The NTR2101PT1G is a P-channel MOSFET transistor from onsemi. It is part of the Discrete Semiconductor Products category and falls under the Transistors - FETs, MOSFETs - Single small classification.
Product Features and Performance
P-channel MOSFET transistor
Drain to Source Voltage (Vdss) of 8V
Vgs (Max) of ±8V
Rds On (Max) of 52mOhm at 3.5A, 4.5V
Continuous Drain Current (Id) of 3.7A at 25°C
Input Capacitance (Ciss) of 1173 pF at 4V
Power Dissipation (Max) of 960mW at Ta
Vgs(th) (Max) of 1V at 250A
Gate Charge (Qg) of 15 nC at 4.5V
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Suitable for various power management and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 8V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Suitable for various safety-critical applications
Compatibility
Surface mount package: SOT-23-3 (TO-236)
Tape and reel packaging
Application Areas
Power management and control circuits
Switching applications
General-purpose power electronics
Product Lifecycle
Currently in production
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
Wide operating temperature range for versatile applications
Suitable for various power management and control applications
RoHS3 compliance for environmental safety
Surface mount and tape and reel packaging for easy integration
NTR2101PSIPUSEMI