NTR1P02LT1G - onsemi

Manufacturer Part Number

NTR1P02LT1G

Manufacturer

onsemi

Introduction

The NTR1P02LT1G is a P-channel MOSFET transistor from onsemi, designed for a variety of electronic applications.

Product Features and Performance

MOSFET (Metal Oxide) technology

Drain to Source Voltage (Vdss) of 20V

Maximum Gate-Source Voltage (Vgs) of ±12V

On-State Resistance (Rds(on)) of 220mOhm @ 750mA, 4.5V

Continuous Drain Current (Id) of 1.3A at 25°C

Input Capacitance (Ciss) of 225pF @ 5V

Power Dissipation of 400mW at 25°C

Product Advantages

Suitable for a wide range of electronic applications

Efficient power switching and control

Reliable performance over a wide temperature range

Key Technical Parameters

MOSFET (Metal Oxide) technology

Drain to Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±12V

On-State Resistance (Rds(on)): 220mOhm @ 750mA, 4.5V

Continuous Drain Current (Id): 1.3A at 25°C

Input Capacitance (Ciss): 225pF @ 5V

Power Dissipation: 400mW at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Reliable performance over a wide temperature range (-55°C to 150°C)

Compatibility

Package: SOT-23-3 (TO-236)

Mounting Type: Surface Mount

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

Control circuits

Product Lifecycle

The NTR1P02LT1G is an active product, and there are no indications of it being discontinued.

Replacement or upgrade options may be available from onsemi or other semiconductor manufacturers.

Key Reasons to Choose This Product

Efficient power switching and control

Reliable performance over a wide temperature range

Suitable for a variety of electronic applications

RoHS3 compliant for environmental compliance

Surface mount package for easy integration into designs