Manufacturer Part Number
NTR0202PLT1G
Manufacturer
onsemi
Introduction
The NTR0202PLT1G is a P-channel enhancement-mode MOSFET transistor from onsemi.
Product Features and Performance
P-channel MOSFET with a drain-source voltage (Vdss) of 20V
Operating temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 800mΩ @ 200mA, 10V
Continuous drain current (Id) of 400mA at 25°C
Input capacitance (Ciss) of 70pF @ 5V
Power dissipation of 225mW at Ta
Product Advantages
Efficient power handling
Wide operating temperature range
Low on-resistance for low power loss
Small package size for compact designs
Key Technical Parameters
Drain-source voltage (Vdss): 20V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 800mΩ @ 200mA, 10V
Continuous drain current (Id): 400mA at 25°C
Input capacitance (Ciss): 70pF @ 5V
Power dissipation: 225mW at Ta
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO certified facility
Compatibility
SOT-23-3 (TO-236) package
Suitable for surface mount applications
Application Areas
Low-power analog and digital circuits
Power management applications
Switching circuits
Voltage regulation
Product Lifecycle
Current product offering, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose this Product
Efficient power handling with low on-resistance
Wide operating temperature range for versatile applications
Small package size for compact designs
Compliance with RoHS3 regulations
Manufactured in an ISO certified facility for quality assurance
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