Manufacturer Part Number
NTR3A30PZT1G
Manufacturer
onsemi
Introduction
The NTR3A30PZT1G is a P-channel MOSFET transistor from onsemi, a leading manufacturer of semiconductor products.
Product Features and Performance
P-channel MOSFET transistor
Drain-to-Source voltage (Vdss) of 20V
Maximum gate-to-source voltage (Vgs) of ±8V
Low on-resistance (Rds(on)) of 38mΩ at 3A, 4.5V
Continuous drain current (Id) of 3A at 25°C
Input capacitance (Ciss) of 1651pF at 15V
Power dissipation (Pd) of 480mW at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching and control
Low on-resistance for low power loss
Small package size for compact designs
Wide operating temperature range
Key Technical Parameters
Drain-to-Source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 38mΩ @ 3A, 4.5V
Continuous drain current (Id): 3A @ 25°C
Input capacitance (Ciss): 1651pF @ 15V
Power dissipation (Pd): 480mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Surface mount package (SOT-23-3)
Compatible with standard MOSFET driver circuits
Application Areas
Power management
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Efficient power switching and control
Low on-resistance for high efficiency
Compact package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly use