Manufacturer Part Number
NTR3162PT1G
Manufacturer
onsemi
Introduction
The NTR3162PT1G is a P-channel enhancement-mode power MOSFET in a SOT-23-3 (TO-236) package, designed for general-purpose switching and amplification applications.
Product Features and Performance
P-channel enhancement-mode MOSFET
Low on-resistance: 70mΩ @ 2.2A, 4.5V
Fast switching speed
Wide operating temperature range: -55°C to 150°C
High power dissipation: 480mW
Low input capacitance: 940pF @ 10V
Low gate charge: 10.3nC @ 4.5V
Product Advantages
Efficient power switching and amplification
Compact and space-saving SOT-23-3 package
Reliable performance across a wide temperature range
Suitable for a variety of general-purpose applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
Continuous Drain Current (Id): 2.2A @ 25°C
Threshold Voltage (Vgs(th)): 1V @ 250μA
Quality and Safety Features
RoHS-compliant
AEC-Q101 qualified
Compatibility
Compatible with various general-purpose electronic circuits and systems
Application Areas
Power supplies
Motor control
Switching circuits
Amplifiers
General-purpose electronic applications
Product Lifecycle
The NTR3162PT1G is an active product and is currently available.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Efficient power switching and amplification performance
Compact and space-saving SOT-23-3 package
Wide operating temperature range for reliable operation
Low on-resistance and fast switching speed for improved energy efficiency
Compatibility with a variety of general-purpose electronic applications