Manufacturer Part Number
NTNS3A65PZT5G
Manufacturer
onsemi
Introduction
This product is a discrete P-Channel MOSFET transistor.
Product Features and Performance
P-Channel MOSFET transistor
Drain to Source Voltage (Vdss) of 20V
Gate to Source Voltage (Vgs) range of ±8V
Low On-Resistance (Rds(on)) of 1.3Ohm @ 200mA, 4.5V
Continuous Drain Current (Id) of 281mA @ 25°C
Input Capacitance (Ciss) of 44pF @ 10V
Power Dissipation (Max) of 155mW @ 25°C
Gate Charge (Qg) of 1.1nC @ 4.5V
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Small surface mount package (SOT-883/XDFN3)
Tape and reel packaging for automated assembly
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 1.3Ohm @ 200mA, 4.5V
Continuous Drain Current (Id): 281mA @ 25°C
Input Capacitance (Ciss): 44pF @ 10V
Power Dissipation (Max): 155mW @ 25°C
Gate Charge (Qg): 1.1nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount package (SOT-883/XDFN3)
Compatible with standard MOSFET driver circuits
Application Areas
Power management circuits
Switching applications
Battery-powered devices
Consumer electronics
Product Lifecycle
This product is currently in production
Replacement or upgraded models may become available in the future
Several Key Reasons to Choose This Product
Low on-resistance for efficient power switching
Wide operating temperature range for diverse applications
Small surface mount package for compact design
Tape and reel packaging for automated assembly
RoHS3 compliance for environmental responsibility