Manufacturer Part Number
NTMSD3P303R2G
Manufacturer
onsemi
Introduction
The NTMSD3P303R2G is a single P-channel MOSFET transistor from onsemi's FETKY series, designed for a wide range of power management and control applications.
Product Features and Performance
30V drain-to-source voltage rating
Maximum gate-to-source voltage of ±20V
On-resistance as low as 85mΩ at 3.05A and 10V gate drive
Continuous drain current of 2.34A at 25°C
Input capacitance of 750pF at 24V
Integrated Schottky diode for fast body diode response
Power dissipation up to 730mW
Product Advantages
Efficient power switching and control
Low on-resistance for low power loss
Fast switching and body diode performance
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 85mΩ @ 3.05A, 10V
Continuous Drain Current (Id): 2.34A @ 25°C
Input Capacitance (Ciss): 750pF @ 24V
Power Dissipation (Pd): 730mW
Quality and Safety Features
Manufactured using robust MOSFET technology
Designed to meet various safety and reliability standards
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Battery chargers
General purpose power switching
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi's product portfolio.
Key Reasons to Choose This Product
Efficient power switching and control with low on-resistance
Fast switching and body diode performance
Wide operating temperature range
Robust MOSFET technology for reliable operation
Compatibility with a variety of power management and control applications