NTMSD3P102R2SG - onsemi

Manufacturer Part Number

NTMSD3P102R2SG

Manufacturer

onsemi

Introduction

High-performance P-channel MOSFET transistor with Schottky diode for power management and control applications.

Product Features and Performance

20V Drain-Source Voltage (Vdss)

85mΩ On-Resistance (RDS(on)) at 3.05A, 10V

34A Continuous Drain Current (ID) at 25°C

750pF Input Capacitance (Ciss) at 16V

730mW Power Dissipation (max) at 25°C

P-channel MOSFET with Schottky diode

Product Advantages

Efficient power management and control

Low on-resistance for low power losses

Compact surface mount package

Reliable Schottky diode for fast switching

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 85mΩ @ 3.05A, 10V

Continuous Drain Current (ID): 2.34A @ 25°C

Input Capacitance (Ciss): 750pF @ 16V

Power Dissipation (max): 730mW @ 25°C

Quality and Safety Features

Robust MOSFET design for reliable operation

Schottky diode for fast switching and protection

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Battery chargers

LED drivers

Product Lifecycle

This product is currently in production and readily available.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Efficient power management and control with low on-resistance

Compact surface mount package for space-constrained designs

Reliable Schottky diode for fast switching and protection

Robust MOSFET design for reliable operation

Compatibility with a wide range of power management and control applications