NTMS5P02R2G - onsemi

Manufacturer Part Number

NTMS5P02R2G

Manufacturer

onsemi

Introduction

The NTMS5P02R2G is a P-channel enhancement mode power MOSFET from onsemi. It is designed for use in a wide range of power management and switching applications.

Product Features and Performance

P-channel MOSFET with a 20V drain-to-source voltage rating

Low on-resistance of 33mΩ at 5.4A and 4.5V

High current capability of 3.95A continuous drain current at 25°C

Low input capacitance of 1900pF at 16V

Power dissipation rating of 790mW at 25°C

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Robust and reliable performance across a wide temperature range

Compact 8-SOIC surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±10V

On-Resistance (Rds(on)): 33mΩ @ 5.4A, 4.5V

Continuous Drain Current (Id): 3.95A @ 25°C

Input Capacitance (Ciss): 1900pF @ 16V

Power Dissipation (Pd): 790mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor control

Battery chargers

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent power efficiency and performance

Robust and reliable operation across wide temperature range

Compact and easy to integrate surface mount package

Manufactured to high quality standards