Manufacturer Part Number
NTMS7N03R2G
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
Low on-resistance (23 mΩ typical) for high efficiency
High current capacity (4.8 A continuous drain current)
Fast switching speed and low gate charge (43 nC)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Reliable and robust design
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate to Source Voltage (Vgs): ±20 V
On-resistance (Rds(on)): 23 mΩ @ 7 A, 10 V
Drain Current (Id): 4.8 A (Ta)
Input Capacitance (Ciss): 1190 pF @ 25 V
Power Dissipation (Pd): 800 mW (Ta)
Quality and Safety Features
RoHS3 compliant
Robust metal-oxide-semiconductor (MOSFET) technology
Compatibility
Surface mount package (8-SOIC)
Suitable for a wide range of power management and switching applications
Application Areas
Power supply and power management circuits
Switching regulators and converters
Motor control and driver circuits
General-purpose switching and amplification
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available upon request
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design
Wide operating temperature range
Suitable for a variety of power management and switching applications
RoHS3 compliance for environmentally-conscious design