Manufacturer Part Number
NTMS4176PR2G
Manufacturer
onsemi
Introduction
This is a P-Channel MOSFET transistor from onsemi, a leading manufacturer of semiconductor products.
Product Features and Performance
Supports a wide operating temperature range of -55°C to 150°C
Has a high drain-to-source voltage rating of 30V
Offers a low on-resistance of 18mΩ at 9.6A and 10V
Features a high input capacitance of 1720pF at 24V
Supports a maximum continuous drain current of 5.5A at 25°C
Provides a maximum power dissipation of 810mW at 25°C
Product Advantages
High voltage and current handling capabilities
Efficient power switching performance
Compact surface-mount 8-SOIC package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 18mΩ @ 9.6A, 10V
Continuous Drain Current (Id): 5.5A @ 25°C
Input Capacitance (Ciss): 1720pF @ 24V
Power Dissipation (Pd): 810mW @ 25°C
Quality and Safety Features
Manufactured using advanced MOSFET technology
Designed to operate safely within the specified temperature range
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications that require efficient power switching and control.
Application Areas
Power management circuits
Motor control systems
Switching power supplies
Industrial automation and control
Product Lifecycle
The NTMS4176PR2G is an active product, and onsemi continues to provide support and availability for this model.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Efficient power switching performance with low on-resistance
Compact and thermally efficient 8-SOIC surface-mount package
Wide operating temperature range suitable for various environmental conditions
Reliable and safe operation backed by onsemi's quality manufacturing processes
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