Manufacturer Part Number
NTMS10P02R2G
Manufacturer
onsemi
Introduction
High-performance p-channel MOSFET transistor in a compact 8-SOIC package, suitable for a variety of power management and switching applications.
Product Features and Performance
Very low on-resistance of 14 mΩ at 10 A, 4.5 V
High current capability of 8.8 A at 25°C
Fast switching with low gate charge of 70 nC at 4.5 V
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 20 V
Product Advantages
Excellent power efficiency due to low on-resistance
Compact 8-SOIC package for space-constrained designs
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Maximum Gate-to-Source Voltage (Vgs): ±12 V
On-Resistance (Rds(on)): 14 mΩ at 10 A, 4.5 V
Continuous Drain Current (Id): 8.8 A at 25°C
Input Capacitance (Ciss): 3640 pF at 16 V
Power Dissipation (Max): 1.6 W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and switching circuits
Application Areas
Power supplies
Motor drives
Switching circuits
General power management applications
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from onsemi.
Several Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Compact 8-SOIC package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for high-reliability requirements
Availability of replacement and upgrade options from the manufacturer