Manufacturer Part Number
NTMS4177PR2G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
12mΩ On-Resistance (Rds(on)) at 11.4A, 10V
6A Continuous Drain Current (Id) at 25°C
3100pF Input Capacitance (Ciss) at 24V
840mW Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance
High Current Capability
Wide Operating Temperature Range
Surface Mount Packaging
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
5V Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
55nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Standard SOIC-8 Package
Application Areas
Power Management
Motor Control
Switching Applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
Excellent performance-to-cost ratio
Reliable and robust design
Wide range of compatible applications
Readily available through distribution