Manufacturer Part Number
NTMS4503NR2G
Manufacturer
onsemi
Introduction
High performance N-channel MOSFET transistor
Product Features and Performance
High power density
Low on-resistance
Fast switching speed
Wide operating temperature range
Product Advantages
Efficient power conversion
Improved system reliability
Reduced power consumption
Compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 28V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 8mΩ @ 14A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 2400pF @ 16V
Power Dissipation (Pd): 930mW
Quality and Safety Features
MOSFET technology for high reliability
Compliance with industry safety standards
Compatibility
Surface mount package (8-SOIC)
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and low power loss
Compact and space-saving design
Wide operating temperature range
Proven reliability and safety
NTMS4404NR2GAMI Semiconductor/onsemi