Manufacturer Part Number
NTMFS4C302NT1G
Manufacturer
onsemi
Introduction
The NTMFS4C302NT1G is a high-performance N-Channel MOSFET transistor designed for power switching applications.
Product Features and Performance
N-Channel MOSFET transistor
Drain-to-Source voltage (Vdss) of 30V
Maximum Gate-to-Source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 1.15mOhm @ 30A, 10V
Continuous Drain Current (Id) of 41A (Ta), 230A (Tc)
Input Capacitance (Ciss) of 5780pF @ 15V
Power Dissipation (Max) of 3.13W (Ta), 96W (Tc)
Gate Charge (Qg) of 82nC @ 10V
Product Advantages
Excellent power handling and efficiency
Low conduction losses
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.15mOhm
Continuous Drain Current (Id): 41A (Ta), 230A (Tc)
Input Capacitance (Ciss): 5780pF
Power Dissipation (Max): 3.13W (Ta), 96W (Tc)
Gate Charge (Qg): 82nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (5-DFN (5x6) (8-SOFL))
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for reduced conduction losses
Suitable for high-current, high-frequency switching applications
RoHS3 compliance for environmental safety
Surface mount package and tape and reel packaging for ease of use
Availability of replacements and upgrades from the manufacturer
