Manufacturer Part Number
NTMFS4C35NT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
30V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
2mΩ Maximum On-Resistance (Rds(on)) at 30A, 10V
4A Continuous Drain Current (Id) at 25°C
2300pF Maximum Input Capacitance (Ciss) at 15V
780mW Power Dissipation (Ta), 33W Power Dissipation (Tc)
15nC Maximum Gate Charge (Qg) at 4.5V
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Efficient Power Conversion
High Current Handling Capability
Compact 5-DFN (5x6) (8-SOFL) Package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.2mΩ @ 30A, 10V
Continuous Drain Current (Id): 12.4A @ 25°C
Input Capacitance (Ciss): 2300pF @ 15V
Power Dissipation: 780mW (Ta), 33W (Tc)
Gate Charge (Qg): 15nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Surface Mount Mounting Type
Application Areas
Power Conversion
Motor Control
Switching Power Supplies
Industrial Electronics
Product Lifecycle
Current product
Availability of replacements and upgrades
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability
Compact package size for space-constrained designs
Wide operating temperature range
Compliance with RoHS3 regulations
