Manufacturer Part Number
NTMFS4C09NAT1G
Manufacturer
onsemi
Introduction
The NTMFS4C09NAT1G is a high-performance N-channel MOSFET transistor from onsemi, suitable for a wide range of power management and switching applications.
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
8mOhm Maximum On-Resistance (Rds(on)) at 30A, 10V
9A Continuous Drain Current (Id) at 25°C Ambient Temperature
52A Continuous Drain Current (Id) at 25°C Case Temperature
1252pF Maximum Input Capacitance (Ciss) at 15V
760mW Maximum Power Dissipation at 25°C Ambient Temperature
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent power handling and efficiency
Compact 5-DFN (5x6) package
Suitable for high-frequency and high-current applications
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 5.8mOhm @ 30A, 10V
Continuous Drain Current (Id): 9A @ 25°C, 52A @ 25°C
Input Capacitance (Ciss): 1252pF @ 15V
Power Dissipation (Max): 760mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial and automotive applications
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Switching and power conversion circuits
Product Lifecycle
Current product in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Compact and space-saving package
Suitable for high-frequency and high-current applications
Robust and reliable performance in industrial and automotive environments
RoHS3 compliance for environmental responsibility
