Manufacturer Part Number
NTMFS4C08NT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET device
Product Features and Performance
30V drain-to-source voltage
8mΩ maximum on-resistance at 18A, 10V
9A continuous drain current at 25°C ambient
52A continuous drain current at 25°C case temperature
1113pF maximum input capacitance at 15V
760mW maximum power dissipation at 25°C ambient
Product Advantages
Ultra-low on-resistance for efficient power conversion
High current capability for demanding applications
Compact PowerTDFN package for space-constrained designs
Key Technical Parameters
Vdss: 30V
Vgs(max): ±20V
Rds(on) (max): 5.8mΩ @ 18A, 10V
Id (continuous): 9A (Ta), 52A (Tc)
Ciss (max): 1113pF @ 15V
Pd (max): 760mW (Ta)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with a wide range of electronic systems and power supplies
Application Areas
Suitable for use in power conversion, motor control, and other high-current applications
Product Lifecycle
This product is an active and widely available part from onsemi.
Key Reasons to Choose This Product
Excellent power efficiency due to ultra-low on-resistance
High current capability for demanding applications
Compact package for space-constrained designs
Automotive-grade quality and reliability
Readily available and widely compatible
