Manufacturer Part Number
NTMFS4C09NBT1G
Manufacturer
onsemi
Introduction
The NTMFS4C09NBT1G is a high-performance N-channel MOSFET transistor from onsemi, designed for a variety of power switching applications.
Product Features and Performance
Low on-resistance of 5.8 mΩ @ 30 A, 10 V
High continuous drain current of 9 A (Ta), 52 A (Tc)
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1252 pF @ 15 V
High power dissipation of 760 mW (Ta), 25.5 W (Tc)
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-current, high-power applications
Compact 5-DFN (5x6) (8-SOFL) package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.1 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg): 10.9 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount technology (SMT) package
Compatible with a wide range of power supply and control circuits
Application Areas
Switching power supplies
Motor drives
Inverters
DC/DC converters
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation or obsolescence
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Compact package size and surface mount compatibility
Wide operating temperature range and high reliability
Suitable for a variety of power switching applications
Manufactured to high quality standards by a reputable semiconductor company