NTHS5441T1G - onsemi

Manufacturer Part Number

NTHS5441T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss) of 20V

Vgs (Max) of ±12V

Rds On (Max) of 46mOhm @ 3.9A, 4.5V

Continuous Drain Current (Id) of 3.9A at 25°C

Input Capacitance (Ciss) of 710pF at 5V

Power Dissipation (Max) of 1.3W at 25°C

Vgs(th) (Max) of 1.2V at 250A

Drive Voltage (Max Rds On) of 2.5V, (Min Rds On) of 4.5V

Gate Charge (Qg) of 22nC at 4.5V

Product Advantages

Efficient power management

Compact surface mount package

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

RoHS3 Compliant

Package: 8-SMD, Flat Lead, Tape & Reel (TR)

Operating Temperature: -55°C to 150°C

Quality and Safety Features

Compliant with RoHS3 requirements

Compatibility

Suitable for various electronic applications requiring P-Channel MOSFET

Application Areas

Power management circuits

Amplifier and switching circuits

Automotive electronics

Industrial controls

Product Lifecycle

Currently available

No indication of discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

High efficiency and power handling capabilities

Compact surface mount package

Wide operating temperature range

Compliance with RoHS3 environmental standards