NTHS4166NT1G - onsemi

Manufacturer Part Number

NTHS4166NT1G

Manufacturer

onsemi

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

High-performance N-Channel MOSFET

Low on-resistance (RDS(on)) of 22 mΩ @ 4.9 A, 10 V

High drain current capability of 4.9 A (continuous)

Wide operating temperature range of -55°C to 150°C

Fast switching speed

Low gate charge of 18 nC @ 10 V

Small package size

Product Advantages

Efficient power management

Reliable performance

Compact design

Versatile application

Key Technical Parameters

Drain to Source Voltage (VDS): 30 V

Gate to Source Voltage (VGS): ±20 V

On-Resistance (RDS(on)): 22 mΩ @ 4.9 A, 10 V

Drain Current (ID): 4.9 A (continuous)

Input Capacitance (Ciss): 900 pF @ 15 V

Power Dissipation: 800 mW

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of electronic applications and circuit designs

Application Areas

Power management circuits

Motor control

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation. Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

Excellent power efficiency and performance

Compact and space-saving design

Wide operating temperature range

Robust and reliable construction

Versatile application potential