NTHS5404T1G - onsemi

Manufacturer Part Number

NTHS5404T1G

Manufacturer

onsemi

Introduction

N-Channel MOSFET transistor

Suitable for various power management and switching applications

Product Features and Performance

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±12 V

Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2 A, 4.5 V

Current Continuous Drain (Id) @ 25°C: 5.2 A (Ta)

Power Dissipation (Max): 1.3 W (Ta)

Vgs(th) (Max) @ Id: 600 mV @ 250 A (Min)

Drive Voltage (Max Rds On, Min Rds On): 2.5 V, 4.5 V

Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V

Operating Temperature: -55°C ~ 150°C (TJ)

Product Advantages

High power density

Low on-resistance

Suitable for high-current switching applications

Robust design

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for various power management and switching applications

Application Areas

Power supplies

Motor drives

Lighting applications

Industrial automation

Product Lifecycle

Current production status: Active

Replacement or upgrade options available

Several Key Reasons to Choose This Product

High power handling capability

Efficient power conversion

Robust design for reliable operation

Wide operating temperature range

Ease of integration with surface mount technology