Manufacturer Part Number
NTHS4101PT1G
Manufacturer
onsemi
Introduction
The NTHS4101PT1G is a P-channel MOSFET transistor from onsemi, a leading manufacturer of semiconductor products.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Drain-to-Source voltage (Vdss) of 20V
Gate-to-Source voltage (Vgs) range of ±8V
Low on-resistance (Rds(on)) of 34 mOhm @ 4.8A, 4.5V
Continuous drain current (Id) of 4.8A at 25°C junction temperature
Input capacitance (Ciss) of 2100 pF @ 16V
Power dissipation (max) of 1.3W at 25°C ambient temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Compact ChipFET surface mount package
Excellent thermal performance and power handling capability
Reliable and durable design for long-term operation
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source voltage (Vdss): 20V
Gate-to-Source voltage (Vgs): ±8V
On-resistance (Rds(on)): 34 mOhm @ 4.8A, 4.5V
Continuous drain current (Id): 4.8A at 25°C
Input capacitance (Ciss): 2100 pF @ 16V
Power dissipation (max): 1.3W at 25°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable design for long-term operation
Compatibility
The NTHS4101PT1G is a direct replacement for a wide range of P-channel MOSFET transistors in various applications.
Application Areas
Power management circuits
Motor control systems
Switching circuits
Amplifier circuits
General-purpose electronic devices
Product Lifecycle
The NTHS4101PT1G is an actively supported product by onsemi. There are no indications of the product being discontinued or reaching end-of-life.
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Compact and space-saving ChipFET surface mount package
Reliable and durable design for long-term operation
Suitable for a wide range of applications in power management, motor control, and general electronics
Actively supported by the manufacturer with no indications of discontinuation