NJT4031NT3G - onsemi

Manufacturer Part Number

NJT4031NT3G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor

Product Features and Performance

Power rating up to 2 W

Collector-emitter breakdown voltage up to 40 V

Collector current up to 3 A

Collector cut-off current up to 100 nA

Low collector-emitter saturation voltage of 300 mV @ 3 A

DC current gain of at least 200 @ 1 A, 1 V

Transition frequency of 215 MHz

Product Advantages

Robust performance in high-current, high-voltage applications

High current handling capability

Compact surface-mount package

Key Technical Parameters

Collector-emitter breakdown voltage: 40 V (max)

Collector current: 3 A (max)

Collector cut-off current: 100 nA (max)

Collector-emitter saturation voltage: 300 mV @ 3 A

DC current gain: 200 (min) @ 1 A, 1 V

Transition frequency: 215 MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in -55°C to 150°C temperature range

Compatibility

Compatible with TO-261-4, TO-261AA package types

Surface-mount SOT-223 (TO-261) package

Application Areas

Suitable for high-power amplifiers, switches, and other high-current, high-voltage circuits

Commonly used in industrial, automotive, and consumer electronics applications

Product Lifecycle

Active and available product

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Robust performance in high-power applications

High current handling capability up to 3 A

Compact surface-mount packaging

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for environmental safety