Manufacturer Part Number
NJT4030PT1G
Manufacturer
onsemi
Introduction
The NJT4030PT1G is a single bipolar junction transistor (BJT) in a Surface Mount (SMT) package.
Product Features and Performance
High collector-emitter breakdown voltage of 40V
High collector current capability of up to 3A
High DC current gain of 200 min. at 1A, 1V
High transition frequency of 160MHz
Suitable for a wide range of applications, including power amplifiers, switches, and regulators
Product Advantages
Compact SMT package
High power and frequency capability
Robust performance across wide temperature range
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 3A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency Transition: 160MHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Packaging: SOT-223 (TO-261)
Mounting Type: Surface Mount
Application Areas
Power amplifiers
Switches
Regulators
Various electronic circuits
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High power and frequency capability in a compact SMT package
Robust performance across a wide temperature range
RoHS3 compliance for environmental responsibility
Suitability for a diverse range of electronic circuit applications