Manufacturer Part Number
NJT4030PT3G
Manufacturer
onsemi
Introduction
The NJT4030PT3G is a high-power PNP bipolar junction transistor (BJT) designed for a variety of power amplifier and switching applications.
Product Features and Performance
High power handling capability up to 2W
Wide operating temperature range of -55°C to 150°C
High collector-emitter breakdown voltage of 40V
High collector current rating of 3A
Low collector-emitter saturation voltage of 500mV @ 3A
High DC current gain of 200 @ 1A, 1V
Fast transition frequency of 160MHz
Product Advantages
Excellent power handling and thermal performance
Wide operating voltage and current range
High switching speed and efficiency
Compact surface mount package
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 40V
Collector Current: 3A
DC Current Gain: 200 @ 1A, 1V
Transition Frequency: 160MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Can be used in various power amplifier and switching applications
Application Areas
Power amplifiers
Switching circuits
Motor control
Power supplies
Product Lifecycle
This is an active product and not nearing discontinuation
Replacement or upgrade parts are readily available
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Wide operating voltage and current range
High switching speed and efficiency
Compact surface mount package
Reliable and durable design
Availability of replacement and upgrade parts