MMJT350T1G - onsemi

Manufacturer Part Number

MMJT350T1G

Manufacturer

onsemi

Introduction

onsemi's MMJT350T1G is a high-voltage, high-power PNP bipolar junction transistor (BJT) suitable for a variety of power management and control applications.

Product Features and Performance

Voltage rating up to 300V

Power handling up to 650mW

Collector current up to 500mA

Low collector-emitter saturation voltage

High current gain (hFE) of at least 30 at 50mA, 10V

Product Advantages

Robust and reliable performance

Compact surface mount package

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 300V

Collector Current (IC): 500mA

Collector-Emitter Saturation Voltage (VCE(sat)): Low

Current Gain (hFE): Minimum 30 @ 50mA, 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

TO-261-4, TO-261AA package

Surface mount (SMT) assembly

Application Areas

Power supplies

Motor control

Industrial electronics

Telecommunications equipment

Product Lifecycle

Current production

Replacement and upgrade options available

Key Reasons to Choose This Product

High-voltage and high-power handling capability

Robust and reliable performance

Compact surface mount package

Wide operating temperature range

RoHS3 compliance for environmental safety