MMJT9410T1G - onsemi

Manufacturer Part Number

MMJT9410T1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT)

Designed for a wide range of power amplifier and switching applications

Product Features and Performance

Power capability up to 3 watts

Collector-emitter breakdown voltage up to 30 volts

Collector current up to 3 amps

High DC current gain of 85 minimum

Transition frequency of 72 MHz

Suitable for surface mount applications

Product Advantages

Efficient power handling

High voltage and current capability

Reliable performance

Compact surface mount package

Key Technical Parameters

Manufacturer Part Number: MMJT9410T1G

Package: TO-261-4, TO-261AA (SOT-223)

Operating Temperature: -55°C to 150°C

Power Rating: 3 watts

Collector-Emitter Breakdown Voltage: 30 volts

Collector Current: 3 amps

DC Current Gain: 85 minimum

Transition Frequency: 72 MHz

Quality and Safety Features

Designed and manufactured to high quality standards

Robust construction for reliable operation

Tested for safety and compliance with industry standards

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

General-purpose power applications

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent power handling capability

High voltage and current ratings

Reliable and efficient performance

Compact surface mount package

Suitable for a wide range of applications