MMJT9435T1G - onsemi

Manufacturer Part Number

MMJT9435T1G

Manufacturer

onsemi

Introduction

The MMJT9435T1G is a high-performance PNP bipolar junction transistor (BJT) in a compact SOT-223 (TO-261) package. It is designed for a wide range of power electronics and amplifier applications.

Product Features and Performance

High power handling capability of up to 3W

Operating temperature range of -55°C to 150°C

Collector-emitter breakdown voltage of 30V

Collector current up to 3A

Transition frequency of 110MHz

Low saturation voltage of 550mV @ 300mA, 3A

Product Advantages

Compact and space-saving SOT-223 (TO-261) package

Suitable for surface mount applications

Excellent thermal performance

Robust and reliable design

Key Technical Parameters

Power Rating: 3W

Collector-Emitter Breakdown Voltage: 30V

Collector Current: 3A

Collector-Emitter Saturation Voltage: 550mV @ 300mA, 3A

DC Current Gain: 125 @ 800mA, 1V

Transition Frequency: 110MHz

Quality and Safety Features

Designed and manufactured to meet the highest quality standards

Robust construction for reliable operation

Compliant with relevant safety regulations and standards

Compatibility

The MMJT9435T1G is compatible with a wide range of electronic circuits and systems, making it suitable for various power electronics and amplifier applications.

Application Areas

Power amplifiers

Switching circuits

Power supplies

Industrial control systems

Automotive electronics

Product Lifecycle

The MMJT9435T1G is an active product and is not nearing discontinuation. Replacements and upgrades may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High power handling capability

Wide operating temperature range

Excellent electrical performance

Compact and space-saving package

Robust and reliable design

Compatibility with a wide range of applications