Manufacturer Part Number
MJW3281AG
Manufacturer
onsemi
Introduction
High voltage, high power NPN bipolar junction transistor (BJT) suitable for a wide range of power applications.
Product Features and Performance
Operates at high voltages up to 230V
Handles high currents up to 15A
Capable of high power dissipation up to 200W
High DC current gain (hFE) of 50 or more
Transition frequency of 30MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Robust and reliable performance
Suitable for high power switching and amplification
Able to withstand high voltage and current conditions
Versatile for use in various power electronics applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 230V
Collector Current (IC): 15A
Collector-Emitter Saturation Voltage (VCE(sat)): 2V @ 1A, 10A
DC Current Gain (hFE): 50 min @ 7A, 5V
Transition Frequency (fT): 30MHz
Quality and Safety Features
Compliant with RoHS3 directive
Packaged in reliable TO-247-3 through-hole package
Compatibility
Suitable for use in a wide range of power electronics applications
Can be used as a replacement or upgrade for similar high power NPN BJTs
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Amplifiers
Industrial controls
Product Lifecycle
This product is an active and widely available part
No plans for discontinuation, with ongoing support and availability of replacements
Several Key Reasons to Choose This Product
Robust and reliable high voltage, high power performance
Versatile and suitable for a wide range of power electronics applications
Proven and reliable TO-247-3 package
Compliant with latest RoHS3 environmental regulations
Ongoing product availability and support
