MJW3281AG - onsemi

Manufacturer Part Number

MJW3281AG

Manufacturer

onsemi

Introduction

High voltage, high power NPN bipolar junction transistor (BJT) suitable for a wide range of power applications.

Product Features and Performance

Operates at high voltages up to 230V

Handles high currents up to 15A

Capable of high power dissipation up to 200W

High DC current gain (hFE) of 50 or more

Transition frequency of 30MHz

Wide operating temperature range of -65°C to 150°C

Product Advantages

Robust and reliable performance

Suitable for high power switching and amplification

Able to withstand high voltage and current conditions

Versatile for use in various power electronics applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 230V

Collector Current (IC): 15A

Collector-Emitter Saturation Voltage (VCE(sat)): 2V @ 1A, 10A

DC Current Gain (hFE): 50 min @ 7A, 5V

Transition Frequency (fT): 30MHz

Quality and Safety Features

Compliant with RoHS3 directive

Packaged in reliable TO-247-3 through-hole package

Compatibility

Suitable for use in a wide range of power electronics applications

Can be used as a replacement or upgrade for similar high power NPN BJTs

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Amplifiers

Industrial controls

Product Lifecycle

This product is an active and widely available part

No plans for discontinuation, with ongoing support and availability of replacements

Several Key Reasons to Choose This Product

Robust and reliable high voltage, high power performance

Versatile and suitable for a wide range of power electronics applications

Proven and reliable TO-247-3 package

Compliant with latest RoHS3 environmental regulations

Ongoing product availability and support