Manufacturer Part Number
MJW18020G
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor
Product Features and Performance
Power rating up to 250W
Collector-emitter breakdown voltage of 450V
Collector current rating up to 30A
Collector cutoff current up to 100A
Low VCE(sat) of 1.5V @ 4A, 20A
High DC current gain of 14 @ 3A, 5V
Transition frequency of 13MHz
Product Advantages
Robust and reliable design
High power handling capability
Excellent electrical characteristics
Suitable for high-power switching and amplifier applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 450V
Current Collector (Ic) (Max): 30A
Current Collector Cutoff (Max): 100A
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Frequency Transition: 13MHz
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Through-hole mounting
Application Areas
High-power switching and amplifier circuits
Power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not approaching discontinuation.
Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
Excellent power handling and electrical characteristics
Robust and reliable design
Suitable for a wide range of high-power applications
RoHS3 compliant for environmental compliance
Through-hole mounting for easy integration
