Manufacturer Part Number
MJW21195G
Manufacturer
onsemi
Introduction
High power PNP bipolar junction transistor designed for switching and amplifier applications.
Product Features and Performance
High power handling capability up to 200W
High collector-emitter breakdown voltage of 250V
High collector current rating of 16A
Wide operating temperature range of -65°C to 150°C
Transition frequency of 4MHz
Product Advantages
Excellent power handling
High voltage and current capability
Wide temperature range
Fast switching performance
Key Technical Parameters
Power Rating: 200W
Collector-Emitter Breakdown Voltage: 250V
Collector Current: 16A
Collector Cutoff Current: 100A
VCE Saturation Voltage: 3V @ 3.2A, 16A
DC Current Gain: 20 min @ 8A, 5V
Transition Frequency: 4MHz
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for high power handling
Compatibility
Suitable for switching and amplifier applications
Application Areas
Power supplies
Motor controls
Industrial equipment
Lighting ballasts
Product Lifecycle
This product is an active, in-production device.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power handling capability for high-performance applications
High voltage and current ratings enable use in demanding circuits
Wide temperature range supports reliable operation in diverse environments
Fast switching speed enables efficient power conversion
RoHS3 compliance for environmental responsibility
