Manufacturer Part Number
MJW21196G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single
Product Features and Performance
TO-247-3 package
Operating Temperature: -65°C ~ 150°C (TJ)
Power Max: 200 W
Voltage Collector Emitter Breakdown (Max): 250 V
Current Collector (Ic) (Max): 16 A
Current Collector Cutoff (Max): 100A
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
Frequency Transition: 4MHz
Product Advantages
High power handling capacity
High voltage and current ratings
Low saturation voltage
High current gain
Key Technical Parameters
Power Max: 200 W
Voltage Collector Emitter Breakdown (Max): 250 V
Current Collector (Ic) (Max): 16 A
Current Collector Cutoff (Max): 100A
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
Frequency Transition: 4MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-247-3 package
Through Hole mounting
Application Areas
Power electronics
Motor control
Switching applications
Product Lifecycle
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High power handling capacity
High voltage and current ratings
Low saturation voltage
High current gain
RoHS3 compliant
