Manufacturer Part Number
MJF45H11G
Manufacturer
onsemi
Introduction
The MJF45H11G is a high-power, high-voltage PNP silicon bipolar transistor with a maximum collector-emitter voltage of 80V and a maximum collector current of 10A.
Product Features and Performance
High power handling capability up to 2W
High voltage operation up to 80V
High collector current up to 10A
High DC current gain of 40 minimum at 4A and 1V
High transition frequency of 40MHz
Suitable for power amplifier, power supply, and motor control applications
Product Advantages
Robust and reliable performance
Compact TO-220 package for efficient heat dissipation
RoHS-compliant design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 80V
Collector Current (max): 10A
Power Dissipation (max): 2W
Transistor Type: PNP
DC Current Gain (min): 40 @ 4A, 1V
Transition Frequency: 40MHz
Quality and Safety Features
RoHS3 compliant
Housed in a reliable and thermally efficient TO-220FP package
Compatibility
The MJF45H11G is a direct replacement for various high-power PNP bipolar transistors in power electronics and motor control applications.
Application Areas
Power amplifiers
Power supplies
Motor control
Industrial electronics
Product Lifecycle
The MJF45H11G is an actively supported product in onsemi's portfolio. There are no plans for discontinuation, and replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Excellent power handling and voltage capability
High current and frequency performance
Robust and reliable design
RoHS compliance for environmentally-friendly use
Proven compatibility and availability of replacement options
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