Manufacturer Part Number
MJF44H11G
Manufacturer
onsemi
Introduction
High-power NPN bipolar transistor for general-purpose applications
Product Features and Performance
High collector-emitter voltage rating of 80V
High collector current rating of 10A
High power dissipation of 2W
High DC current gain (hFE) of 40 minimum at 4A collector current
High transition frequency of 50MHz
Product Advantages
Robust and reliable performance
Suitable for high-power, high-current applications
Versatile and can be used in various circuits
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 80V
Current Collector (Ic) (Max): 10A
Current Collector Cutoff (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency Transition: 50MHz
Quality and Safety Features
RoHS3 compliant
Suitable for use in high-temperature environments up to 150°C
Compatibility
Through-hole mounting
Compatible with various electronic circuits and applications
Application Areas
General-purpose power amplifiers
Motor control
Switching power supplies
Inverters
Industrial control systems
Product Lifecycle
Currently available, not nearing discontinuation
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
Robust and reliable high-power performance
Versatile for use in various high-power, high-current applications
Suitable for high-temperature environments
RoHS3 compliance for environmental sustainability
MJF350Fairchild (onsemi)