Manufacturer Part Number
MJF15030G
Manufacturer
onsemi
Introduction
The MJF15030G is a high-power NPN bipolar junction transistor (BJT) designed for a variety of power switching and amplifier applications.
Product Features and Performance
High power handling capability up to 2 watts
High collector-emitter breakdown voltage of 150 volts
High collector current rating of 8 amps
Fast switching speed with a transition frequency of 30 MHz
Robust design for reliable operation in harsh environments
Product Advantages
Excellent power dissipation capability
High voltage and current handling
Fast switching performance
Rugged and durable construction
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 150V
Collector Current (Max): 8A
Power Dissipation: 2W
Transition Frequency: 30MHz
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant for environmental safety
TO-220FP package for reliable thermal management
Compatibility
Suitable for a wide range of power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Inverters
Amplifiers
Industrial controls
Product Lifecycle
This product is currently in production and widely available.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High power handling and voltage capability
Fast switching performance for efficient operation
Robust and reliable design for harsh environments
Compatibility with a wide range of power electronics applications
RoHS3 compliance for environmental responsibility