Manufacturer Part Number
MJF15031G
Manufacturer
onsemi
Introduction
High-power bipolar junction transistor (BJT) for general-purpose amplifier and switching applications.
Product Features and Performance
High power rating of 2 W
High breakdown voltage of 150 V
High collector current capacity of up to 8 A
High current gain of 20 (min.) at 4 A, 2 V
High transition frequency of 30 MHz
Operating temperature range of -65°C to 150°C
Product Advantages
Suitable for high-power amplifier and switching applications
Robust design for reliable operation
Compact TO-220 package for easy integration
Key Technical Parameters
Power Rating: 2 W
Collector-Emitter Breakdown Voltage: 150 V
Collector Current (Max): 8 A
Collector Cutoff Current (Max): 10 A
Collector-Emitter Saturation Voltage: 500 mV @ 100 mA, 1 A
DC Current Gain: 20 (min.) @ 4 A, 2 V
Transition Frequency: 30 MHz
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to meet high-quality standards
Compatibility
TO-220 package for easy replacement in existing designs
Application Areas
General-purpose amplifier and switching applications
Power electronics
Industrial control systems
Automotive electronics
Product Lifecycle
This product is still in active production and available for purchase.
Replacement or upgraded products may be available in the future, but no specific information is provided.
Several Key Reasons to Choose This Product
High power rating and voltage capability for demanding applications
Robust design and wide operating temperature range for reliable performance
Compact package and high current gain for efficient integration
RoHS3 compliance for use in environmentally-conscious applications
