MJD6039T4G - onsemi

Manufacturer Part Number

MJD6039T4G

Manufacturer

onsemi

Introduction

The MJD6039T4G is a high-performance NPN Darlington transistor suitable for a wide range of power switching and amplification applications.

Product Features and Performance

High current capability up to 4A

High DC current gain of 500 (minimum) at 2A, 4V

Low collector-emitter saturation voltage of 2.5V at 8mA, 2A

Wide operating temperature range of -65°C to 150°C

Robust DPAK package for reliable surface mount operation

Product Advantages

Optimized for power switching and amplification

Efficient thermal management in the DPAK package

High reliability and ruggedness for demanding applications

Suitable for a wide range of voltages up to 80V

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 80V

Collector Current (Max): 4A

Collector Cutoff Current (Max): 10A

Power Dissipation (Max): 1.75W

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Tested and qualified for reliable performance

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Power supplies

Motor drives

Lighting controls

Industrial automation

Automotive electronics

Product Lifecycle

Currently in active production

Replacement parts and upgrades available

Key Reasons to Choose

High current capability and efficiency for power applications

Robust DPAK package for reliable operation

Wide operating temperature range for versatile use

Optimized performance characteristics for power switching and amplification