MJD47T4G - onsemi

Manufacturer Part Number

MJD47T4G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN silicon power transistor designed for use in power amplifier, switching regulator, and other industrial and commercial applications.

Product Features and Performance

High power handling capability of up to 1.56W

High voltage rating of up to 250V

High current rating of up to 1A

High current gain of up to 30 at 300mA, 10V

High frequency transition of up to 10MHz

Suitable for a wide temperature range of -65°C to 150°C

Product Advantages

Reliable and robust performance

Efficient power handling

Versatile applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 250V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 200μA

Collector-Emitter Saturation Voltage (Max): 1V @ 200mA, 1A

DC Current Gain (Min): 30 @ 300mA, 10V

Transition Frequency: 10MHz

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Can be used in a variety of power amplifier, switching regulator, and other industrial and commercial applications

Application Areas

Power amplifiers

Switching regulators

Industrial and commercial applications requiring high-voltage, high-current transistors

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may be available in the future, but the specific timeline is unknown.

Several Key Reasons to Choose This Product

High power handling capability

Wide voltage and current ratings

Robust and reliable performance

Versatile applications

Efficient power management

Suitable for a wide temperature range