MJD5731T4G - onsemi

Manufacturer Part Number

MJD5731T4G

Manufacturer

onsemi

Introduction

The MJD5731T4G is a PNP bipolar junction transistor (BJT) in a DPAK package, designed for high-voltage, high-current switching and amplification applications.

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

High collector-emitter breakdown voltage: 350V

High collector current rating: 1A

Low collector-emitter saturation voltage: 1V @ 1A

High current gain: 30 minimum @ 300mA, 10V

High transition frequency: 10MHz

Product Advantages

Excellent high-voltage and high-current handling capabilities

Compact DPAK surface mount package

Reliable performance across a wide temperature range

Suitable for a variety of power switching and amplification applications

Key Technical Parameters

Power Rating: 1.56W

Collector-Emitter Breakdown Voltage: 350V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 100μA

Current Gain (hFE): 30 min @ 300mA, 10V

Transition Frequency: 10MHz

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

The MJD5731T4G is a direct replacement for a variety of high-voltage, high-current PNP bipolar transistors in similar package configurations.

Application Areas

Power supplies

Motor controls

Lighting ballasts

Industrial automation equipment

Audio amplifiers

Product Lifecycle

The MJD5731T4G is an active product and is not nearing discontinuation. Onsemi offers various replacement and upgrade options for this device.

Key Reasons to Choose This Product

Exceptional high-voltage and high-current performance

Compact and efficient DPAK surface mount package

Wide operating temperature range for diverse applications

Reliable and consistent quality backed by Onsemi's reputation

Readily available through Onsemi's global distribution network