MJD50T4G - onsemi

Manufacturer Part Number

MJD50T4G

Manufacturer

onsemi

Introduction

The MJD50T4G is a high-voltage, high-current NPN bipolar junction transistor (BJT) from onsemi, suitable for a variety of power switching and amplification applications.

Product Features and Performance

High voltage rating up to 400V

High current handling capability up to 1A

High frequency operation up to 10MHz

Low collector-emitter saturation voltage (VCE(sat)) of 1V @ 1A

Wide operating temperature range from -65°C to 150°C

Product Advantages

Robust and reliable performance

Efficient power switching and amplification

Suitable for high-power applications

Small and compact DPAK package

Key Technical Parameters

Collector-Emitter Voltage (VCEO): 400V

Collector Current (IC): 1A

DC Current Gain (hFE): 30 min @ 300mA, 10V

Transition Frequency (fT): 10MHz

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments

Compatibility

Widely compatible with various power electronic circuits and systems

Application Areas

Power supplies

Motor drives

Switching regulators

Industrial and automotive electronics

Product Lifecycle

Currently in production

No discontinuation or replacement plans announced

Several Key Reasons to Choose This Product

Excellent high-voltage and high-current performance

Robust and reliable operation

Compact and space-saving DPAK package

Suitable for a wide range of power switching and amplification applications

Cost-effective solution for high-power electronics