Manufacturer Part Number
MJ15023G
Manufacturer
onsemi
Introduction
The MJ15023G is a high-power PNP bipolar junction transistor (BJT) capable of handling high voltage and current.
Product Features and Performance
High power handling up to 250W
High voltage capability up to 200V
High current rating up to 16A
High current gain of 15 minimum at 8A, 4V
High transition frequency of 4MHz
Operating temperature range of -65°C to 200°C
Product Advantages
Robust and reliable performance
Capable of handling high power applications
Suitable for a wide range of power electronics and industrial control circuits
Key Technical Parameters
Power Rating: 250W
Collector-Emitter Breakdown Voltage: 200V
Collector Current: 16A
Collector Cutoff Current: 500A
Collector-Emitter Saturation Voltage: 4V @ 3.2A, 16A
DC Current Gain: 15 minimum @ 8A, 4V
Transition Frequency: 4MHz
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Through-hole mounting in TO-204 (TO-3) package
Application Areas
Power amplifiers
Motor drives
Inverters
Switching regulators
Industrial control circuits
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
High power handling capability
Robust voltage and current rating
Excellent power-to-size ratio
Reliable and safe operation
Wide temperature range
Suitability for a variety of power electronics applications
MJ150BX120TAEC Product (Toshiba Electronic Devices and StoraIGBT Module