Manufacturer Part Number
MJ15004G
Manufacturer
onsemi
Introduction
High-power PNP silicon power transistor
Product Features and Performance
High collector current capability up to 20A
High collector-emitter breakdown voltage up to 140V
High power handling up to 250W
High DC current gain up to 25
High transition frequency up to 2MHz
Wide operating temperature range from -65°C to 200°C
Product Advantages
Excellent power handling capability
High reliability and durability
Wide range of applications
Key Technical Parameters
Power Max: 250 W
Voltage Collector Emitter Breakdown (Max): 140 V
Current Collector (Ic) (Max): 20 A
Current Collector Cutoff (Max): 250A
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 2V
Frequency Transition: 2MHz
Quality and Safety Features
RoHS3 compliant
TO-204 (TO-3) package for reliable and safe operation
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power amplifiers
Switching regulators
Servo motor controls
Industrial control equipment
Welding equipment
Audio equipment
Product Lifecycle
This product is an active and widely available part from onsemi.
Several Key Reasons to Choose This Product
High power handling capability up to 250W
Wide operating temperature range from -65°C to 200°C
High reliability and durability
Excellent performance characteristics, including high current, high voltage, and high frequency
RoHS3 compliance for safety and environmental considerations
Compatible with a wide range of electronic applications
