Manufacturer Part Number
MJ15022G
Manufacturer
onsemi
Introduction
High-power NPN silicon power transistor
Designed for high-speed switching and power amplifier applications
Product Features and Performance
High-power handling capability up to 250 W
Collector-emitter breakdown voltage of 200 V
Collector current up to 16 A
Transition frequency of 4 MHz
Collector-emitter saturation voltage of 4 V @ 16 A
Product Advantages
Robust and reliable performance
Efficient heat dissipation
Suitable for high-speed switching and power amplifier applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 200 V
Current Collector (Ic) (Max): 16 A
Current Collector Cutoff (Max): 500 A
Vce Saturation (Max) @ Ib, Ic: 4 V @ 3.2 A, 16 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8 A, 4 V
Frequency Transition: 4 MHz
Quality and Safety Features
RoHS3 compliant
TO-204 (TO-3) package for efficient heat dissipation
Compatibility
Compatible with a wide range of electronic devices and power systems
Application Areas
High-speed switching
Power amplifier applications
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation at this time
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Efficient heat dissipation through the TO-204 (TO-3) package
Suitable for high-speed switching and power amplifier applications
RoHS3 compliance for environmental sustainability
Compatibility with a wide range of electronic devices and power systems
