Manufacturer Part Number
MJ15024G
Manufacturer
onsemi
Introduction
High-power NPN silicon transistor
Suitable for high-current, high-voltage applications
Product Features and Performance
High power handling capability up to 250W
High collector-emitter breakdown voltage of 250V
High collector current rating up to 16A
High collector cutoff current of 500A
Low collector-emitter saturation voltage of 4V @ 16A
Wide operating temperature range of -65°C to 200°C
High DC current gain of 15 @ 8A, 4V
Transition frequency of 4MHz
Product Advantages
Robust and reliable performance
Capable of handling high power and high current loads
Suitable for various high-power applications
Key Technical Parameters
Power Rating: 250W
Collector-Emitter Breakdown Voltage: 250V
Collector Current (Max): 16A
Collector Cutoff Current (Max): 500A
Collector-Emitter Saturation Voltage: 4V @ 3.2A, 16A
DC Current Gain: 15 @ 8A, 4V
Transition Frequency: 4MHz
Operating Temperature Range: -65°C to 200°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
TO-204 (TO-3) package
Suitable for high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Wide range of technical parameters suitable for demanding requirements
Proven reliability and safety features
Compatibility with various high-power electronics applications
Availability of replacement and upgrade options from the manufacturer
MJ150BX120TAEC Product (Toshiba Electronic Devices and StoraIGBT Module